Silicon angular resonance gyroscope by deep ICPRIE and XeF2 gas etching

Jae joon Choi, Risaku Toda, Kazuyuki Minami, Masayoshi Esashi

Research output: Contribution to conferencePaperpeer-review

15 Citations (Scopus)

Abstract

An angular resonance silicon gyroscope was fabricated by deep RIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg./sec.).

Original languageEnglish
Pages322-327
Number of pages6
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 IEEE 11th Annual International Workshop on Micro Electro Mechanical Systems - Heidelberg, Ger
Duration: 1998 Jan 251998 Jan 29

Other

OtherProceedings of the 1998 IEEE 11th Annual International Workshop on Micro Electro Mechanical Systems
CityHeidelberg, Ger
Period98/1/2598/1/29

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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