Silicon angular rate sensor using PZT thin film

Masaru Nagao, Kazuyuki Minami, Masayoshi Esashi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A silicon resonant angular rate sensor using lead zirconate titanate (Pb(Zr, Ti)O3, or PZT) thin film for detecting sensor vibration was fabricated by silicon micromachining technology, and its basic properties were examined. PZT was deposited on a silicon wafer directly with a multitarget sputtering system. Since fabricated PZT thin films have poor piezoelectric characteristics, these films could not be used for driving the mass of the sensor. For this reason, the mass of the sensor was driven by an external piezoelectric actuator instead of PZT films. The test device could be successfully used as an angular rate sensor.

Original languageEnglish
Pages (from-to)31-39
Number of pages9
JournalSensors and Materials
Volume11
Issue number1
Publication statusPublished - 1999 Dec 1

Keywords

  • Angular rate sensor
  • Gyroscope
  • PZT
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

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  • Cite this

    Nagao, M., Minami, K., & Esashi, M. (1999). Silicon angular rate sensor using PZT thin film. Sensors and Materials, 11(1), 31-39.