Silane gas-source atomic layer epitaxy

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

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29 Citations (Scopus)

Abstract

Silicon atomic layer epitaxy (ALE) has been performed on Si(100) by utilizing a self-limiting adsorption of silane at room temperature and a thermal reactivation of the surface for further adsorption. The presence of the self-limiting adsorption was confirmed through a saturation of the adsorbed molecules above 8000 L of silane dose. This saturation is shown to be caused by surface hydrogen atoms, which on annealing up to 700°C all desorb from the surface, converting the desorbed surface to an active one for further adsorption. By repeating the silane-adsorption/thermal-desorption processes, Si epitaxial growth with a unit of 0.25-0.33 ML has been realized. Mechanisms for self-limiting adsorption of silane and for sub-monolayer growth unit in ALE are also discussed.

Original languageEnglish
Pages (from-to)592-596
Number of pages5
JournalApplied Surface Science
Volume60-61
Issue numberC
DOIs
Publication statusPublished - 1992 Jan 1

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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    Hirose, F., Suemitsu, M., & Miyamoto, N. (1992). Silane gas-source atomic layer epitaxy. Applied Surface Science, 60-61(C), 592-596. https://doi.org/10.1016/0169-4332(92)90480-L