Abstract
Anisotropic magnetoresistance (AMR) effects in Cox(Mn0.44Ga0.56)100-x epitaxial thin films were investigated in the temperature range of 5-300 K by changing the current (I) direction to the crystal axis and the Co content (x). The AMR ratios were mostly positive for I // Co2MnGa[100] and negative for I // Co2MnGa[110] and showed peak values at x = 49.7 at% for both current directions. AMR ratios calculated from s-d scattering theory, including crystal field effects with density of states information from first-principles calculations, well reproduced experimental features.
Original language | English |
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Article number | 103005 |
Journal | Applied Physics Express |
Volume | 12 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2019 Oct 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)