Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect

Keita Ito; Kazuki Kabara; Tatsunori Sanai; Kaoru Toko; Yoji Imai; Masakiyo Tsunoda; Takashi Suemasu

doi:10.1063/1.4892179

Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect

Keita Ito, Kazuki Kabara, Tatsunori Sanai, Kaoru Toko, Yoji Imai, Masakiyo Tsunoda, Takashi Suemasu

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We present the anisotropic magnetoresistance (AMR) properties in Fe ₄N, Co₃FeN and Co₄N epitaxial thin films grown on SrTiO₃(001) substrates using molecular beam epitaxy. A negative AMR effect was observed in the Fe₄N and Co₃FeN films below 300K. This behavior was attributed to the negative spin-polarizations of both the electrical conductivity and density of states at the Fermi level. The sign of the AMR ratio changed at ∼140K in the Co₄N film and was negative below 140K. Diffraction lines corresponding to the (100) plane were clearly observed in the 2θ_χ (in-plane) x-ray diffraction patterns for the Fe₄N and Co₃FeN films but not for the Co₄N film. This indicated that nitrogen atoms were present at the body center of each unit cell in the Fe₄N and Co₃FeN films, whereas they were lacking in the Co₄N film. This assumption is discussed with energetic calculations using a spin density-functional theory.

Original language	English
Article number	053912
Journal	Journal of Applied Physics
Volume	116
Issue number	5
DOIs	https://doi.org/10.1063/1.4892179
Publication status	Published - 2014 Aug 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect",

abstract = "We present the anisotropic magnetoresistance (AMR) properties in Fe 4N, Co3FeN and Co4N epitaxial thin films grown on SrTiO3(001) substrates using molecular beam epitaxy. A negative AMR effect was observed in the Fe4N and Co3FeN films below 300K. This behavior was attributed to the negative spin-polarizations of both the electrical conductivity and density of states at the Fermi level. The sign of the AMR ratio changed at ∼140K in the Co4N film and was negative below 140K. Diffraction lines corresponding to the (100) plane were clearly observed in the 2θχ (in-plane) x-ray diffraction patterns for the Fe4N and Co3FeN films but not for the Co4N film. This indicated that nitrogen atoms were present at the body center of each unit cell in the Fe4N and Co3FeN films, whereas they were lacking in the Co4N film. This assumption is discussed with energetic calculations using a spin density-functional theory.",

author = "Keita Ito and Kazuki Kabara and Tatsunori Sanai and Kaoru Toko and Yoji Imai and Masakiyo Tsunoda and Takashi Suemasu",

year = "2014",

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doi = "10.1063/1.4892179",

language = "English",

volume = "116",

journal = "Journal of Applied Physics",

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T1 - Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect

AU - Ito, Keita

AU - Kabara, Kazuki

AU - Sanai, Tatsunori

AU - Toko, Kaoru

AU - Imai, Yoji

AU - Tsunoda, Masakiyo

AU - Suemasu, Takashi

PY - 2014/8/7

Y1 - 2014/8/7

N2 - We present the anisotropic magnetoresistance (AMR) properties in Fe 4N, Co3FeN and Co4N epitaxial thin films grown on SrTiO3(001) substrates using molecular beam epitaxy. A negative AMR effect was observed in the Fe4N and Co3FeN films below 300K. This behavior was attributed to the negative spin-polarizations of both the electrical conductivity and density of states at the Fermi level. The sign of the AMR ratio changed at ∼140K in the Co4N film and was negative below 140K. Diffraction lines corresponding to the (100) plane were clearly observed in the 2θχ (in-plane) x-ray diffraction patterns for the Fe4N and Co3FeN films but not for the Co4N film. This indicated that nitrogen atoms were present at the body center of each unit cell in the Fe4N and Co3FeN films, whereas they were lacking in the Co4N film. This assumption is discussed with energetic calculations using a spin density-functional theory.

AB - We present the anisotropic magnetoresistance (AMR) properties in Fe 4N, Co3FeN and Co4N epitaxial thin films grown on SrTiO3(001) substrates using molecular beam epitaxy. A negative AMR effect was observed in the Fe4N and Co3FeN films below 300K. This behavior was attributed to the negative spin-polarizations of both the electrical conductivity and density of states at the Fermi level. The sign of the AMR ratio changed at ∼140K in the Co4N film and was negative below 140K. Diffraction lines corresponding to the (100) plane were clearly observed in the 2θχ (in-plane) x-ray diffraction patterns for the Fe4N and Co3FeN films but not for the Co4N film. This indicated that nitrogen atoms were present at the body center of each unit cell in the Fe4N and Co3FeN films, whereas they were lacking in the Co4N film. This assumption is discussed with energetic calculations using a spin density-functional theory.

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Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect

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