SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor

Nobuyuki Sugii, Shinya Yamaguchi, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A novel technique for fabricating completely strain-relaxed SiGe-on-insulator substrates with low surface roughness and dislocation density suitable for the strained-silicon CMOS was made. Thus, a completely strain-relaxed SiGe layer of uniform composition and high crystallinity could be grown by this method. The defect density of this substrate was found to be less than 1000 cm-2, and its surface roughness was 0.39 nm (rms).

Original languageEnglish
Pages (from-to)1891-1896
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
Publication statusPublished - 2002 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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