Abstract
A novel technique for fabricating completely strain-relaxed SiGe-on-insulator substrates with low surface roughness and dislocation density suitable for the strained-silicon CMOS was made. Thus, a completely strain-relaxed SiGe layer of uniform composition and high crystallinity could be grown by this method. The defect density of this substrate was found to be less than 1000 cm-2, and its surface roughness was 0.39 nm (rms).
Original language | English |
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Pages (from-to) | 1891-1896 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2002 Sep 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering