A novel technique for fabricating completely strain-relaxed SiGe-on-insulator substrates with low surface roughness and dislocation density suitable for the strained-silicon CMOS was made. Thus, a completely strain-relaxed SiGe layer of uniform composition and high crystallinity could be grown by this method. The defect density of this substrate was found to be less than 1000 cm-2, and its surface roughness was 0.39 nm (rms).
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2002 Sep 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering