SiGe HBT/BiCMOS technologies and their applications to communication ICs/LSIs

Katsuya Oda, Katsuyoshi Washio, Takashi Hashimoto

Research output: Contribution to journalConference articlepeer-review


Self-aligned ultra-high-speed SiGe HBTs were developed by using selective epitaxial growth (SEG) technology. The use of HCl-free SEG, incorporation of C, and optimization of doping profiles significantly improves the performance of the HBT, producing a transistor with a high cutoff frequency of 170 GHz and a maximum oscillation frequency of 204 GHz, for a minimum ECL gate delay time of 4.8 ps. This is applied in a 16:1 MUX with a maximum clock rate of 57 GHz. A 0.13-μm SiGe BiCMOS technology is also realized without any degradation of CMOS due to the high stability of SiGe HBTs. Furthermore, the structure of SiGe HBT is optimized for an emitter scaled down towards 100 nm, mainly through the use of a funnel-shaped emitter electrode to reduce both emitter and base resistances. High-speed operation of a static frequency divider demonstrates the advantage of SiGe HBTs for ultra-high-speed communications systems.

Original languageEnglish
Pages (from-to)161-170
Number of pages10
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 2004 Jan 1
Externally publishedYes
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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