TY - GEN
T1 - SiGe HBT based 24-GHz LNA and VCO for short-range ultra-wideband radar systems
AU - Masuda, Toru
AU - Nakamura, Takahiro
AU - Tanabe, Masamichi
AU - Shiramizu, Nobuhiro
AU - Wada, Shin Ichiro
AU - Hashimoto, Takashi
AU - Washio, Katsuyoshi
PY - 2005/1/1
Y1 - 2005/1/1
N2 - 24-GHz low noise amplifier (LNA) and voltage controlled oscillator (VCO) in 0.25-μm SiGe BiCMOS technology were developed to create low-cost radio frequency (RF) modules for short-range ultra-wideband radar systems. A two-stage shunt-feedback LNA that used inductive biasing had a -3-dB bandwidth of 11.4 GHz, a noise figure of 3.8 dB at 24 GHz, and a group delay deviation within 21 ps (from 10 GHz to 30 GHz). The LC-tuned differential VCO, with a high quality-factor center-tapped inductor design, oscillated at 24 GHz with phase noise of -100 dBc/Hz at 1 MHz offset. The VCO core consumed only 2 mA of current.
AB - 24-GHz low noise amplifier (LNA) and voltage controlled oscillator (VCO) in 0.25-μm SiGe BiCMOS technology were developed to create low-cost radio frequency (RF) modules for short-range ultra-wideband radar systems. A two-stage shunt-feedback LNA that used inductive biasing had a -3-dB bandwidth of 11.4 GHz, a noise figure of 3.8 dB at 24 GHz, and a group delay deviation within 21 ps (from 10 GHz to 30 GHz). The LC-tuned differential VCO, with a high quality-factor center-tapped inductor design, oscillated at 24 GHz with phase noise of -100 dBc/Hz at 1 MHz offset. The VCO core consumed only 2 mA of current.
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U2 - 10.1109/ASSCC.2005.251756
DO - 10.1109/ASSCC.2005.251756
M3 - Conference contribution
AN - SCOPUS:34250711272
SN - 0780391624
SN - 9780780391628
T3 - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
SP - 425
EP - 428
BT - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
PB - IEEE Computer Society
T2 - 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
Y2 - 1 November 2005 through 3 November 2005
ER -