SiGe HBT and BiCMOS Technologies

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and BiCMOS devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency fT and maximum oscillation frequency fmax to more than 200 GHz. Impurity-profile engineering has enhanced operating speed and has improved characteristic controllability. In addition, a scaled-down emitter has provided both high-speed and low-power performance. In regards to SiGe BiCMOS technology, scaling of CMOS gate length is continuing rapidly in response to the need for sophisticated functions in communication LSIs. Accordingly, integration process schemes and technologies for embedding scaled CMOS with high-speed SiGe HBTs are being developed.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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