SiGe HBT amplifiers with high image rejection for quasi-millimeter-wave frequency range

Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

24-GHz band amplifiers with a high imagerejection function have been designed and characterized using a 0.18-μm SiGe BiCMOS technology. To achieve a higher image-rejection ratio (IRR) in the quasi-millimeterwave frequency region, an amplifier configuration with a notch-filter type feedback circuit has been proposed. A low noise amplifier (LNA) and a driver amplifier (DA) were developed to eliminate the image-frequency signal for superheterodyne transceivers. The LNA obtained a 16.5-dB gain, 5.9-dB NF at 24 GHz and a more than 40-dB IRR at a frequency of 18.5 GHz. The power consumption was 8.4 mW with a 1.4-V power supply. The DA also achieved a 6.5-dB gain at 24 GHz and a 40-dB IRR at 16 GHz. Moreover, largesignal characteristics such as an OP1dB of +1.4 dBm and an OIP3 of +15 dBm were obtained for a power consumption of 15 mW with a 1.5-V power supply. The large-signal capability of the IRR was also experimentally confirmed.

Original languageEnglish
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages132-135
Number of pages4
DOIs
Publication statusPublished - 2010 Apr 23
Externally publishedYes
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: 2010 Jan 112010 Jan 13

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period10/1/1110/1/13

Keywords

  • Amplifier
  • Notch filer
  • SiGe HBT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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