Abstract
The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.
Original language | English |
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Pages (from-to) | 260-264 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 224 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2004 Mar 15 |
Keywords
- Elevated source/drain structure
- FD SOI MOSFET
- Nickel germanosilicide
- SiGe
- Step annealing
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films