SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

Jeoung Chill Shim, Hyuckjae Oh, Hoon Choi, Takeshi Sakaguchi, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.

Original languageEnglish
Pages (from-to)260-264
Number of pages5
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Elevated source/drain structure
  • FD SOI MOSFET
  • Nickel germanosilicide
  • SiGe
  • Step annealing

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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