SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

Jeoung Chill Shim; Hyuckjae Oh; Hoon Choi; Takeshi Sakaguchi; Hiroyuki Kurino; Mitsumasa Koyanagi

doi:10.1016/j.apsusc.2003.08.091

SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

Jeoung Chill Shim, Hyuckjae Oh, Hoon Choi, Takeshi Sakaguchi, Hiroyuki Kurino, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L _g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.

Original language	English
Pages (from-to)	260-264
Number of pages	5
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.091
Publication status	Published - 2004 Mar 15

Keywords

Elevated source/drain structure
FD SOI MOSFET
Nickel germanosilicide
SiGe
Step annealing

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2003.08.091

Cite this

@article{f8e3ce8ae0074d94b0dedbaf009eb365,

title = "SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication",

abstract = " The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.",

keywords = "Elevated source/drain structure, FD SOI MOSFET, Nickel germanosilicide, SiGe, Step annealing",

author = "Shim, {Jeoung Chill} and Hyuckjae Oh and Hoon Choi and Takeshi Sakaguchi and Hiroyuki Kurino and Mitsumasa Koyanagi",

year = "2004",

month = mar,

day = "15",

doi = "10.1016/j.apsusc.2003.08.091",

language = "English",

volume = "224",

pages = "260--264",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

AU - Shim, Jeoung Chill

AU - Oh, Hyuckjae

AU - Choi, Hoon

AU - Sakaguchi, Takeshi

AU - Kurino, Hiroyuki

AU - Koyanagi, Mitsumasa

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.

AB - The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L g of 0.1 μm were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.

KW - Elevated source/drain structure

KW - FD SOI MOSFET

KW - Nickel germanosilicide

KW - SiGe

KW - Step annealing

UR - http://www.scopus.com/inward/record.url?scp=1142304526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1142304526&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2003.08.091

DO - 10.1016/j.apsusc.2003.08.091

M3 - Article

AN - SCOPUS:1142304526

VL - 224

SP - 260

EP - 264

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -

SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this