SiGe crystal growth aboard the international space station

K. Kinoshita, Y. Arai, Takao Tsukada, Y. Inatomi, H. Miyata, R. Tanaka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Abstract A silicon germanium mixed crystal Si1-xGex (x~0.5) 10 mm in diameter and 9.2 mm in length was grown by the traveling liquidus-zone (TLZ) method in microgravity by suppressing convection in a melt. Ge concentration of 49.8±2.5 at% has been established for the whole of the grown crystal. Compared with the former space experiment, concentration variation in the axial direction increased from ±1.5 at% to ±2.5 at% although average Ge concentration reached to nearly 50 at%. Excellent radial Ge compositional uniformity 52±0.5 at% was established in the region of 7-9 mm growth length, where axial compositional uniformity was also excellent. The single crystalline region is about 5 mm in length. The interface shape change from convex to concave is implied from both experimental results and numerical analysis. The possible cause of increase in concentration variation and interface shape change and its relation to the two-dimensional growth model are discussed.

Original languageEnglish
Article number22459
Pages (from-to)31-36
Number of pages6
JournalJournal of Crystal Growth
Volume417
DOIs
Publication statusPublished - 2015 May 1

Keywords

  • A1. Convection
  • A1. Diffusion
  • A2. Growth from solution
  • A2. Travelling solvent zone growth
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Kinoshita, K., Arai, Y., Tsukada, T., Inatomi, Y., Miyata, H., & Tanaka, R. (2015). SiGe crystal growth aboard the international space station. Journal of Crystal Growth, 417, 31-36. [22459]. https://doi.org/10.1016/j.jcrysgro.2014.09.048