SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD

D. Lee, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Fingerprint

Dive into the research topics of 'SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD'. Together they form a unique fingerprint.

Engineering & Materials Science