SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD

D. Lee, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As the feature size of MOSFETs becomes increasingly small, the super self-aligned process is extremely important for the progress of ULSIs. The improvement of carrier mobility in the channel region is also indispensable. It has been reported that the introduction of high-quality Si1-xGex with x≈0.5 in the channel region drastically improves the pMOSFET performance. In this paper, it is shown that SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe chemical vapor deposition (CVD) have been successfully realized. The schematic device structure is described along with the fabrication process flow.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-84
Number of pages2
ISBN (Electronic)0780373170
DOIs
Publication statusPublished - 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 2002 Jun 242002 Jun 26

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Other

Other60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period02/6/2402/6/26

Keywords

  • Electrodes
  • Fabrication
  • Flowcharts
  • MOSFET circuits
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Lee, D., Sakuraba, M., Matsuura, T., Murota, J., & Tsuchiya, T. (2002). SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD. In 60th Device Research Conference, DRC 2002 (pp. 83-84). [1029525] (Device Research Conference - Conference Digest, DRC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2002.1029525