SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs

Makoto Miura, Hiromi Shimamoto, Reiko Hayami, Akihiro Kodama, Tatsuya Tominari, Takashi Hashimoto, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
PublisherIEEE Computer Society
ISBN (Print)1424404614, 9781424404612
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: 2006 May 152006 May 17

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Other

OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
CountryUnited States
CityPrinceton, NJ
Period06/5/1506/5/17

ASJC Scopus subject areas

  • Computer Science(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Miura, M., Shimamoto, H., Hayami, R., Kodama, A., Tominari, T., Hashimoto, T., & Washio, K. (2006). SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1716036] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246542