SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs

Makoto Miura; Hiromi Shimamoto; Reiko Hayami; Akihiro Kodama; Tatsuya Tominari; Takashi Hashimoto; Katsuyoshi Washio

doi:10.1109/istdm.2006.246542

SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs

Makoto Miura, Hiromi Shimamoto, Reiko Hayami, Akihiro Kodama, Tatsuya Tominari, Takashi Hashimoto, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publisher	IEEE Computer Society
ISBN (Print)	1424404614, 9781424404612
DOIs	https://doi.org/10.1109/istdm.2006.246542
Publication status	Published - 2006 Jan 1
Externally published	Yes
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/istdm.2006.246542

Cite this

Miura, M., Shimamoto, H., Hayami, R., Kodama, A., Tominari, T., Hashimoto, T., & Washio, K. (2006). SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1716036] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246542

SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. / Miura, Makoto; Shimamoto, Hiromi; Hayami, Reiko; Kodama, Akihiro; Tominari, Tatsuya; Hashimoto, Takashi; Washio, Katsuyoshi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. 1716036 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miura, M, Shimamoto, H, Hayami, R, Kodama, A, Tominari, T, Hashimoto, T & Washio, K 2006, SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1716036, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, IEEE Computer Society, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15. https://doi.org/10.1109/istdm.2006.246542

Miura M, Shimamoto H, Hayami R, Kodama A, Tominari T, Hashimoto T et al. SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society. 2006. 1716036. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest). https://doi.org/10.1109/istdm.2006.246542

Miura, Makoto ; Shimamoto, Hiromi ; Hayami, Reiko ; Kodama, Akihiro ; Tominari, Tatsuya ; Hashimoto, Takashi ; Washio, Katsuyoshi. / SiGe BiCMOS technologies for improving sensitivity and high-speed characteristics of the communication LSIs. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

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