Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Takeo Ohno, Yutaka Oyama

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm -2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Original languageEnglish
Article number013002
JournalScience and Technology of Advanced Materials
Volume13
Issue number1
DOIs
Publication statusPublished - 2012 Feb

Keywords

  • deep level
  • impurity doping
  • molecular layer epitaxy of gallium arsenide
  • quantum-confined tunneling
  • sidewall tunnel junction
  • terahertz devices
  • thin film

ASJC Scopus subject areas

  • Materials Science(all)

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