Abstract
n+-polysilicon etching with both high anisotropy and high selectivity has been realized in our previous work by irradiating the nitrogen added chlorine plasma under a low ion energy condition using an ultraclean ECR etcher. In the present paper, mechanisms of the side etch of n+-polysilicon with pure and nitrogen added chlorine plasmas are discussed. 1100 and 4500 A thick n+-polysilicon films with mask SiO2 films were etched with nitrogen added (<20%) chlorine plasmas under a highly selective condition at 4 mTorr using and ultraclean ECR plasma etcher described previously. The lateral etch length was determined by cross sectional SEM observation.
Original language | English |
---|---|
Pages | 418-419 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 1992 |
Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28 |
Other
Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
---|---|
City | Tsukuba, Jpn |
Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- Engineering(all)