Side etch control of n+-polysilicon with nitrogen added chlorine plasma

Takashi Matsuura, Junichi Murota, Tadahiro Ohmi, Soichi Ono

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

n+-polysilicon etching with both high anisotropy and high selectivity has been realized in our previous work by irradiating the nitrogen added chlorine plasma under a low ion energy condition using an ultraclean ECR etcher. In the present paper, mechanisms of the side etch of n+-polysilicon with pure and nitrogen added chlorine plasmas are discussed. 1100 and 4500 A thick n+-polysilicon films with mask SiO2 films were etched with nitrogen added (<20%) chlorine plasmas under a highly selective condition at 4 mTorr using and ultraclean ECR plasma etcher described previously. The lateral etch length was determined by cross sectional SEM observation.

Original languageEnglish
Pages418-419
Number of pages2
DOIs
Publication statusPublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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