n+-polysilicon etching with both high anisotropy and high selectivity has been realized in our previous work by irradiating the nitrogen added chlorine plasma under a low ion energy condition using an ultraclean ECR etcher. In the present paper, mechanisms of the side etch of n+-polysilicon with pure and nitrogen added chlorine plasmas are discussed. 1100 and 4500 A thick n+-polysilicon films with mask SiO2 films were etched with nitrogen added (<20%) chlorine plasmas under a highly selective condition at 4 mTorr using and ultraclean ECR plasma etcher described previously. The lateral etch length was determined by cross sectional SEM observation.
|Number of pages||2|
|Publication status||Published - 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas