Sic/Sin Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition

Tsuneaki Ohta, Shuichi Noda, Masanori Kasai, Hirosi Hoga

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

SiC/SiN multilayer membranes consisting of SiC and thin SiN layers were prepared using hot-wall, low-pressure chemical vapor deposition (LPCVD) for synchrotron radiation (SR) lithography. The SiC/SiN multilayers had advantages such as uniformity in the controlled film stress, good surface morphology and optical transmittance ofover 60% at film thicknesses from 1.7 to 2.5 µm. The optical transmittance of over 80% with an antireflectioncoating (ARC) was obtained. X-ray masks were fabricated using the SiC/SiN multilayer membranes and W filmsas absorber. The 80-nm-feature patterns on the resist films were obtained by electron beam (EB) lithography. SRdurability of the X-ray masks using the SiC/SiN multilayer was discussed assuming a stress change in the thin SiNlayers.

Original languageEnglish
Pages (from-to)6701-6708
Number of pages8
JournalJapanese journal of applied physics
Volume34
Issue number12
DOIs
Publication statusPublished - 1995 Dec

Keywords

  • EB
  • LPCVD
  • Optical transmittance
  • SR lithography
  • SiC
  • SiC/SiN multilayer
  • SiN
  • Stress
  • Surface morphology
  • W
  • X-ray mask

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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