Abstract
SiC/SiN multilayer membranes consisting of SiC and thin SiN layers were prepared using hot-wall, low-pressure chemical vapor deposition (LPCVD) for synchrotron radiation (SR) lithography. The SiC/SiN multilayers had advantages such as uniformity in the controlled film stress, good surface morphology and optical transmittance ofover 60% at film thicknesses from 1.7 to 2.5 µm. The optical transmittance of over 80% with an antireflectioncoating (ARC) was obtained. X-ray masks were fabricated using the SiC/SiN multilayer membranes and W filmsas absorber. The 80-nm-feature patterns on the resist films were obtained by electron beam (EB) lithography. SRdurability of the X-ray masks using the SiC/SiN multilayer was discussed assuming a stress change in the thin SiNlayers.
Original language | English |
---|---|
Pages (from-to) | 6701-6708 |
Number of pages | 8 |
Journal | Japanese journal of applied physics |
Volume | 34 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1995 Dec |
Externally published | Yes |
Keywords
- EB
- LPCVD
- Optical transmittance
- SR lithography
- SiC
- SiC/SiN multilayer
- SiN
- Stress
- Surface morphology
- W
- X-ray mask
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)