SiC nanowires formed by high energy ion beam irradiation to polymer films and heating

Satoshi Tsukuda, Shu Seki, Masaki Sugimoto, Seiichi Tagawa, Shun Ichiro Tanaka

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Ion bombardment can release densely active intermediates within a cylindrical area along the passage of a single ion. The cylindrical area, in which high-energy is deposited from projectile ion, is sometimes called an "ion track". The high energy charged particle irradiation of a polycarbosilane (PCS) film causes cross-linking reactions, leading to the formation of a polymer gel containing cylindrical nanostructures (nanowires). The diameter and length of the nanowires were completely controlled by changing several parameters. PCS is also a well-known a precursor of silicon carbide (SiC), and the PCS nanowires formed by the present techniques were heated at 1,000 °C in Ar gas. A SiC ceramic wire, which has a higher heat resistance than polymers, was obtained on a Si substrate by conversion from the PCS nanowires. In this paper, the crystal structure and phase of the SiC nanowires obtained are discussed.

Original languageEnglish
Pages (from-to)466-469
Number of pages4
JournalJournal of Ceramic Processing Research
Volume9
Issue number5
Publication statusPublished - 2008 Dec 15

Keywords

  • Ion beam
  • Polycarbosilane
  • Silicon carbide (SiC)
  • and Nanowire

ASJC Scopus subject areas

  • Ceramics and Composites

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