Si(313) 12×1: Another metallic stable surface of silicon having a complex reconstructed layer

Gai Zheng, R. G. Zhao, W. S. Yang, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

    Original languageEnglish
    Article number085301
    Pages (from-to)853011-853016
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume63
    Issue number8
    Publication statusPublished - 2001 Mar 31

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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