Si(313) 12×1: Another metallic stable surface of silicon having a complex reconstructed layer

Gai Zheng; R. G. Zhao; W. S. Yang; T. Sakurai

Si(313) 12×1: Another metallic stable surface of silicon having a complex reconstructed layer

Gai Zheng, R. G. Zhao, W. S. Yang, T. Sakurai

Research output: Contribution to journal › Article › peer-review

Abstract

By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

Original language	English
Article number	085301
Pages (from-to)	853011-853016
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	8
Publication status	Published - 2001 Mar 31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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abstract = "By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.",

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AU - Zheng, Gai

AU - Zhao, R. G.

AU - Yang, W. S.

AU - Sakurai, T.

PY - 2001/3/31

Y1 - 2001/3/31

N2 - By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

AB - By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

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Si(313) 12×1: Another metallic stable surface of silicon having a complex reconstructed layer

Abstract

ASJC Scopus subject areas

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