Si(100)-(2×1) etching with fluorine: Planar removal versus three dimensional pitting

Koji S. Nakayama, J. H. Weaver

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2×1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective. 1999

Original languageEnglish
Pages (from-to)3210-3213
Number of pages4
JournalPhysical Review Letters
Volume83
Issue number16
DOIs
Publication statusPublished - 1999 Oct 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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