Abstract
The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2×1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective. 1999
| Original language | English |
|---|---|
| Pages (from-to) | 3210-3213 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 83 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1999 Oct 18 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Nakayama, K. S., & Weaver, J. H. (1999). Si(100)-(2×1) etching with fluorine: Planar removal versus three dimensional pitting. Physical Review Letters, 83(16), 3210-3213. https://doi.org/10.1103/PhysRevLett.83.3210