TY - JOUR
T1 - Si(100)-(2×1) etching with fluorine
T2 - Planar removal versus three dimensional pitting
AU - Nakayama, Koji S.
AU - Weaver, J. H.
PY - 1999/10/18
Y1 - 1999/10/18
N2 - The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2×1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective. 1999
AB - The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2×1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective. 1999
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U2 - 10.1103/PhysRevLett.83.3210
DO - 10.1103/PhysRevLett.83.3210
M3 - Article
AN - SCOPUS:17744415597
VL - 83
SP - 3210
EP - 3213
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 16
ER -