Si(001) surface layer-by-layer oxidation studied by real-time photoelectron spectroscopy using synchrotron radiation

Shuichi Ogawa, Akitaka Yoshigoe, Shinji Ishidzuka, Yuden Teraoka, Yuji Takakuwa

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31 Citations (Scopus)


High-resolution O 1s and Si 2p photoelectron spectroscopy using synchrotron radiation was employed to clarify a layer-by-layer oxidation reaction mechanism on a Si(001) surface from the viewpoint of point defect generation due to an oxidation-induced strain at a SiO2/Si interface. The Si β and Siα components in Si 2p3/2 spectra, which are assigned to the first and second strained Si layers, respectively, below the transition layer composed of suboxides, Si1+, Si2+, and Si3+, significantly decrease during the step-by-step temperature increase-enhanced growth of the second oxide layer. Because of the corresponding band bending changes measured using the O 1s peak position, which are caused by defect-related band gap states, the observed decreases in Siβ and Siα components, indicating a decrease in interfacial strain, are induced not only by the structural relaxation of a SiO2 network due to a thermal annealing effect, but also due to the generation of point defects at the SiO2/Si interface. Continuous band bending changes with the growth of the third oxide layer also suggest that the point defects are generated during oxide growth, whereas the Si&beta and Siα components are maintained almost constant. On the basis of the observed interfacial strain and point defect generation changes, the layer-by-layer growth kinetics of the first, second and third oxide layers is discussed using a unified Si oxidation reaction model mediated by point defect generation at the SiO2/Si interface [S. Ogawa and Y. Takakuwa: Jpn. J. Appl. Phys. 45 (2006) 7063].

Original languageEnglish
Pages (from-to)3244-3254
Number of pages11
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 B
Publication statusPublished - 2007 May 17


  • Band bending
  • Layer-by-layer oxidation
  • Point defect generation
  • Real-time monitoring
  • Si surface
  • Strained Si layer
  • Synchrotron radiation
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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