Si X-ray absorption near edge structure (XANES) in X-ray fluorescence spectra

Jun Kawai, Kouichi Hayashi, Kazuaki Okuda, Atsushi Nisawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Silicon K X-ray fluorescence spectra of Si and SiO2 single crystals are measured using a wave dispersive X-ray fluorescence spectrometer. It is demonstrated that the fine structures in the line shape of the low energy tail of the Kα characteristic X-ray fluorescence spectra resemble those of the K X-ray absorption near edge structure (XANES).

Original languageEnglish
Pages (from-to)245-246
Number of pages2
JournalChemistry Letters
Issue number3
DOIs
Publication statusPublished - 1998 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)

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