Si-SiO2 interface structures on Si(100), (111), and (110) surfaces

Takeo Hattori, Toshihisa Suzuki

    Research output: Contribution to journalArticle

    87 Citations (Scopus)

    Abstract

    The distributions of intermediate oxides (SiOx, 0<x<2) in ultrathin oxide films formed on (100), (111), and (110) surfaces were investigated by using the nondestructive measurements of Si 2p photoelectron spectra. The experimental observations can be understood as follows: (1) the abrupt interfaces are formed for three crystal orientations; (2) the interface formed at 1000°C on (100), (111), and (110) surface consists mainly of SiO, Si2O, and the mixture of SiO and Si2O, respectively; (3) Si2O3 is distributed in the oxide films for three crystal orientations.

    Original languageEnglish
    Pages (from-to)470-472
    Number of pages3
    JournalApplied Physics Letters
    Volume43
    Issue number5
    DOIs
    Publication statusPublished - 1983 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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