Si-SiO2 INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.

Takeo Hattori, Masaaki Muto, Toshihisa Suzuki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    PublisherSpringer Verlag
    Pages229-232
    Number of pages4
    ISBN (Print)0387961089, 9780387961088
    DOIs
    Publication statusPublished - 1985

    ASJC Scopus subject areas

    • Engineering(all)

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