Si-SiO2 INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.

Takeo Hattori; Masaaki Muto; Toshihisa Suzuki

doi:10.1007/978-1-4615-7682-2_50

Si-SiO₂ INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.

Takeo Hattori, Masaaki Muto, Toshihisa Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	Springer Verlag
Pages	229-232
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_50
Publication status	Published - 1985

ASJC Scopus subject areas

Engineering(all)

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10.1007/978-1-4615-7682-2_50

Cite this

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title = "Si-SiO2 INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.",

abstract = "The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.",

author = "Takeo Hattori and Masaaki Muto and Toshihisa Suzuki",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_50",

language = "English",

isbn = "0387961089",

publisher = "Springer Verlag",

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T1 - Si-SiO2 INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.

AU - Hattori, Takeo

AU - Muto, Masaaki

AU - Suzuki, Toshihisa

PY - 1985

Y1 - 1985

N2 - The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.

AB - The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.

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UR - http://www.scopus.com/inward/citedby.url?scp=0022215257&partnerID=8YFLogxK

U2 - 10.1007/978-1-4615-7682-2_50

DO - 10.1007/978-1-4615-7682-2_50

M3 - Conference contribution

AN - SCOPUS:0022215257

SN - 0387961089

SN - 9780387961088

SP - 229

EP - 232

BT - Unknown Host Publication Title

PB - Springer Verlag

ER -

Si-SiO₂ INTERFACE STRUCTURES ON (100), (110), AND (111) SURFACES.

Abstract

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