Abstract
The Si-SiO//2 interface structures are shown to depend on crystal orientations from destructive and nondestructive measurements of Si 2p photoelectron spectra. The intermediate oxides, Si//2O//3, which corresponds to Si-Si bonds, are found to be distributed in the oxide films for three orientations.
Original language | English |
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Title of host publication | Unknown Host Publication Title |
Publisher | Springer Verlag |
Pages | 229-232 |
Number of pages | 4 |
ISBN (Print) | 0387961089, 9780387961088 |
DOIs | |
Publication status | Published - 1985 |
ASJC Scopus subject areas
- Engineering(all)