Si-SiO2 interface structures - chemical shifts in Si 2p photoelectron spectra

Hiroaki Yamagishi; Noboru Koike; Keitaro Imai; Kikuo Yamabe; Takeo Hattori

Si-SiO₂ interface structures - chemical shifts in Si 2p photoelectron spectra

Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, Kikuo Yamabe, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

Abstract

From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO₂ interface.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	27
Issue number	8
Publication status	Published - 1988 Aug

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

@article{53b7c5562ecf4149825500671f54cbc3,

title = "Si-SiO2 interface structures - chemical shifts in Si 2p photoelectron spectra",

abstract = "From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.",

author = "Hiroaki Yamagishi and Noboru Koike and Keitaro Imai and Kikuo Yamabe and Takeo Hattori",

year = "1988",

month = aug,

language = "English",

volume = "27",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Si-SiO2 interface structures - chemical shifts in Si 2p photoelectron spectra

AU - Yamagishi, Hiroaki

AU - Koike, Noboru

AU - Imai, Keitaro

AU - Yamabe, Kikuo

AU - Hattori, Takeo

PY - 1988/8

Y1 - 1988/8

N2 - From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.

AB - From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.

UR - http://www.scopus.com/inward/record.url?scp=0024054619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024054619&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024054619

VL - 27

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

ER -

Si-SiO₂ interface structures - chemical shifts in Si 2p photoelectron spectra

Abstract

ASJC Scopus subject areas

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