Si-SiO2 interface structures - chemical shifts in Si 2p photoelectron spectra

Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, Kikuo Yamabe, Takeo Hattori

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    29 Citations (Scopus)

    Abstract

    From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume27
    Issue number8
    Publication statusPublished - 1988 Aug

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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