From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 1988 Aug|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)