Based on the observation of crystal orientation dependence of Si 2p photoelectron spectra, the orientation dependence of interface structures and the distribution of intermediate oxidation states of silicon in the oxide film were determined. The effects of oxidation condition on the structures of interfacial transition layer and SiO//2 were also found.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|Publication status||Published - 1984 Dec 1|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas