Si-SiO//2 INTERFACE STRUCTURES OF ULTRATHIN OXIDES.

Takeo Hattori, Toshihisa Suzuki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Based on the observation of crystal orientation dependence of Si 2p photoelectron spectra, the orientation dependence of interface structures and the distribution of intermediate oxidation states of silicon in the oxide film were determined. The effects of oxidation condition on the structures of interfacial transition layer and SiO//2 were also found.

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherBusiness Cent for Academic Soc Japan
    Pages479-482
    Number of pages4
    ISBN (Print)4930813077
    Publication statusPublished - 1984 Dec 1

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Hattori, T., & Suzuki, T. (1984). Si-SiO//2 INTERFACE STRUCTURES OF ULTRATHIN OXIDES. In Conference on Solid State Devices and Materials (pp. 479-482). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan.