Si self-diffusivity using isotopically pure 30Si epitaxial layers

S. R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, S. Matumoto, M. Sakuraba, Y. Shimamune, Y. Hashiba, Junichi Murota, K. Wada, T. Abe

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

In order to understand the properties of point defects in Si, it is important to clarify temperature dependence of Si intrinsic self-diffusion coefficient over a wide temperature range. In this work, we used highly isotopically enriched 30 Si epi-layers as a diffusion source to bulk and epi-layers Si and evaluated self-diffusion 30Si epi-layers were grown on each CZ-Si substrate and non-doped epi-layer grown on CZ-Si substrate using low pressure CVD with 30SiH4. Diffusion was performed in resistance furnaces under pure Ar (99.9%) atmosphere at temperature between 867 and 1300°C. After annealing, the concentrations of the respective Si isotopes were measured with SIMS. Diffusion coefficients of 30Si (called Si self-diffusivity, DSD) were determined using numerical fitting process with 30Si SIMS profiles. We found no major differences in self-diffusivity between in bulk Si and epi-layers Si. It was shown that within 867-1300°C range, DSD can be described by an Arrhenius equation with one single activation enthalpy, DSD = 14 exp (-4.37 eV/kT). The present result is in good agreement with that of Bracht et al.

Original languageEnglish
Pages (from-to)330-333
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 30

Keywords

  • CZ-Si substrate
  • Self-diffusivity
  • Si isotopes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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