Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices

Daisuke Ohori; Masayuki Murata; Atsushi Yamamoto; Kazuhiko Endo; Min Hui Chuang; Ming Yi Lee; Yiming Li; Jenn Hwan Tarng; Yao Jen Lee; Seiji Samukawa

doi:10.1109/NANO51122.2021.9514289

Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices

Daisuke Ohori, Masayuki Murata, Atsushi Yamamoto, Kazuhiko Endo, Min Hui Chuang, Ming Yi Lee, Yiming Li, Jenn Hwan Tarng, Yao Jen Lee, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.

Original language	English
Title of host publication	NANO 2021 - 21st IEEE International Conference on Nanotechnology, Proceedings
Publisher	IEEE Computer Society
Pages	199-202
Number of pages	4
ISBN (Electronic)	9781665441568
DOIs	https://doi.org/10.1109/NANO51122.2021.9514289
Publication status	Published - 2021 Jul 28
Event	21st IEEE International Conference on Nanotechnology, NANO 2021 - Virtual, Montreal, Canada Duration: 2021 Jul 28 → 2021 Jul 30

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2021-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	21st IEEE International Conference on Nanotechnology, NANO 2021
Country/Territory	Canada
City	Virtual, Montreal
Period	21/7/28 → 21/7/30

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO51122.2021.9514289

Cite this

Ohori, D., Murata, M., Yamamoto, A., Endo, K., Chuang, M. H., Lee, M. Y., Li, Y., Tarng, J. H., Lee, Y. J., & Samukawa, S. (2021). Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices. In NANO 2021 - 21st IEEE International Conference on Nanotechnology, Proceedings (pp. 199-202). (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2021-July). IEEE Computer Society. https://doi.org/10.1109/NANO51122.2021.9514289

Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices. / Ohori, Daisuke; Murata, Masayuki; Yamamoto, Atsushi et al.

NANO 2021 - 21st IEEE International Conference on Nanotechnology, Proceedings. IEEE Computer Society, 2021. p. 199-202 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2021-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohori, D, Murata, M, Yamamoto, A, Endo, K, Chuang, MH, Lee, MY, Li, Y, Tarng, JH, Lee, YJ & Samukawa, S 2021, Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices. in NANO 2021 - 21st IEEE International Conference on Nanotechnology, Proceedings. Proceedings of the IEEE Conference on Nanotechnology, vol. 2021-July, IEEE Computer Society, pp. 199-202, 21st IEEE International Conference on Nanotechnology, NANO 2021, Virtual, Montreal, Canada, 21/7/28. https://doi.org/10.1109/NANO51122.2021.9514289

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abstract = "We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.",

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AU - Chuang, Min Hui

AU - Lee, Ming Yi

AU - Li, Yiming

AU - Tarng, Jenn Hwan

AU - Lee, Yao Jen

AU - Samukawa, Seiji

PY - 2021/7/28

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N2 - We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.

AB - We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.

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Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices

Abstract

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