Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching

K. Morimoto, K. Araki, K. Yamashita, K. Monta, M. Niwa

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

We present a novel Si nanofabrication method based on an atomic force microscope (AFM) field-enhanced oxidation and an anisotropic wet chemical etching using SIMOX (separation by implanted oxygen) wafer. A newly developed AFM system enables this fabrication method to be fully compatible with a conventional VLSI process. Using this technique, Si quantum wire with a feature size of 60 nm has been successfully fabricated within the intended area. Moreover, by means of a structural analysis by cross-sectional transmission electron microscopy, it is confirmed that the AFM-field-enhanced oxide film has a similar excellent structure as thermally grown oxide.

Original languageEnglish
Pages (from-to)652-659
Number of pages8
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • AFM
  • Anisotropic wet etching
  • Field enhanced oxide
  • SIMOX
  • Si nanofabrication
  • Si quantum wire

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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