Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

Si image sensors with a wide spectral response range and a high robustness to ultraviolet light exposure based on flattened Si surface are described in this paper. A photodiode (PD) fabrication technology is developed to form a thin surface high concentration layer with steep dopant profile on flattened Si surface. Due to this, PDs with a wide spectral response ranging from 200 to 1000 nm is achieved with almost 100% internal quantum efficiency to ultraviolet light (UV-light) waveband. In addition, high robustness of light sensitivity and dark current toward UV-light exposure is obtained. The developed technology is applied to in-pixel buried PDs of photodiode arrays and a CMOS image sensor. The advanced performances of fabricated sensors are verified with experimental results.

Original languageEnglish
Article number20142004
JournalIEICE Electronics Express
Volume11
Issue number10
DOIs
Publication statusPublished - 2014

Keywords

  • CMOS image sensor
  • Photodiode
  • Photodiode array
  • Si surface
  • Ultraviolet light

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Si image sensors with wide spectral response and high robustness to ultraviolet light exposure'. Together they form a unique fingerprint.

Cite this