TY - JOUR
T1 - Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma
AU - Hirata, Takamichi
AU - Motegi, Noriyuki
AU - Hatakeyama, Rikizo
AU - Oku, Takeo
AU - Mieno, Tetsu
AU - Sato, Naoyuki
AU - Mase, Hiroshi
AU - Niwano, Michio
AU - Miyamoto, Nobuo
AU - Sato, Noriyoshi
PY - 2000/11/15
Y1 - 2000/11/15
N2 - Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radio-frequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes SiCn (n = 74, 86, etc.). The soot structure analyzes with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be SiCn, and carbon nanocapsules filled with SiC.
AB - Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radio-frequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes SiCn (n = 74, 86, etc.). The soot structure analyzes with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be SiCn, and carbon nanocapsules filled with SiC.
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U2 - 10.1143/jjap.39.l1130
DO - 10.1143/jjap.39.l1130
M3 - Article
AN - SCOPUS:0034318571
VL - 39
SP - L1130-L1132
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 B
ER -