Si epitaxial growth on SiH 3 CH 3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment

Kazuya Takahashi, Masaki Fujiu, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Epitaxial growth of Si on SiH 3 CH 3 reacted Ge(1 0 0) using ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD), and the intermixing between Si and Ge during heat treatment has been investigated. By SiH 3 CH 3 reaction at 450°C, Si and C atomic layers are self-limitedly formed on Ge(1 0 0), and the number of C atoms decreases with increasing heat treatment temperature in the range of 500-700°C. After such treatment, Si epitaxial growth on the 6×10 13 cm -2 C existing Ge(1 0 0) is achieved at 500°C. To clarify the interface abruptness, dependence of Ge 3d intensity on the depth are obtained by repetition of X-ray photoelectron spectroscopy (XPS) measurements and wet etching. It is found that the intermixing between Si and Ge during Si epitaxial growth and heat treatment after its growth is suppressed by the existence of C atoms at the heterointerface.

Original languageEnglish
Pages (from-to)193-196
Number of pages4
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - 2003 May 15

Keywords

  • Ge(1 0 0)
  • Heterointerface
  • Interdiffusion
  • Si epitaxial growth
  • SiH CH

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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