Si epitaxial growth on self-limitedly B adsorbed Si1 - xGex(100) by ultraclean low-pressure CVD system

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

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5 Citations (Scopus)


B atomic-layer doping in Si/Si1 - xGex(100) (x = 0.3, 1) heterostructure utilizing BCl3 reaction on Si1 - xGex(100) and subsequent Si epitaxial growth by SiH4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 × 1014 cm- 2) B formed Si1 - xGex(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH4 exposure at 300 °C after BCl3 exposure. Furthermore, it was found that the SiH4 reaction at 300 °C on Ge(100) is enhanced by B adsorption.

Original languageEnglish
Pages (from-to)229-231
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - 2008 Nov 3


  • Atomic layer doping
  • B
  • BCl
  • Chemical vapor deposition (CVD)
  • SiGe
  • SiH
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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