Abstract
Control of N2 and SiH4 reaction on Si(1 0 0) enhanced by Ar plasma irradiation is investigated with the aim of realization of an N delta-doped Si epitaxial film out of thermal equilibrium. Si epitaxial growth on about 7.6×1014 cm-2 nitrided Si(1 0 0) and formation of an N delta-doped Si epitaxial film are achieved by N2 and SiH4 reaction under Ar plasma exposure without substrate heating. Lowering of the Si deposition rate is observed on the nitrided Si(1 0 0) surface, and surface roughness tends to increase with the initial N amount. The incorporated N atoms are confined in a 3.5-nm-thick region and the total N amount reaches as high as 5.5×1014 cm-2. Ar incorporation is also observed and the peak position of the Ar concentration is different from that of N.
Original language | English |
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Pages (from-to) | 65-68 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 8 |
Issue number | 1-3 SPEC. ISS. |
DOIs | |
Publication status | Published - 2005 Feb |
Keywords
- Atomic layer doping
- Electron-cyclotron resonance plasma
- Nitrogen-doped silicon
- Plasma-enhanced chemical vapor deposition
- Silicon epitaxial growth
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering