Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma

Masaki Mori, Takuya Seino, Daisuke Muto, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Control of N2 and SiH4 reaction on Si(1 0 0) enhanced by Ar plasma irradiation is investigated with the aim of realization of an N delta-doped Si epitaxial film out of thermal equilibrium. Si epitaxial growth on about 7.6×1014 cm-2 nitrided Si(1 0 0) and formation of an N delta-doped Si epitaxial film are achieved by N2 and SiH4 reaction under Ar plasma exposure without substrate heating. Lowering of the Si deposition rate is observed on the nitrided Si(1 0 0) surface, and surface roughness tends to increase with the initial N amount. The incorporated N atoms are confined in a 3.5-nm-thick region and the total N amount reaches as high as 5.5×1014 cm-2. Ar incorporation is also observed and the peak position of the Ar concentration is different from that of N.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb 1

Keywords

  • Atomic layer doping
  • Electron-cyclotron resonance plasma
  • Nitrogen-doped silicon
  • Plasma-enhanced chemical vapor deposition
  • Silicon epitaxial growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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