Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma

Control of N₂ and SiH₄ reaction on Si(1 0 0) enhanced by Ar plasma irradiation is investigated with the aim of realization of an N delta-doped Si epitaxial film out of thermal equilibrium. Si epitaxial growth on about 7.6×10¹⁴ cm^-2 nitrided Si(1 0 0) and formation of an N delta-doped Si epitaxial film are achieved by N₂ and SiH₄ reaction under Ar plasma exposure without substrate heating. Lowering of the Si deposition rate is observed on the nitrided Si(1 0 0) surface, and surface roughness tends to increase with the initial N amount. The incorporated N atoms are confined in a 3.5-nm-thick region and the total N amount reaches as high as 5.5×10¹⁴ cm^-2. Ar incorporation is also observed and the peak position of the Ar concentration is different from that of N.