Hf O2 Si O2 Si (001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy. Growth of the interfacial Si O2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the Si O2 Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)