Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure

Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Keisaku Yamada

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43 Citations (Scopus)


Hf O2 Si O2 Si (001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy. Growth of the interfacial Si O2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the Si O2 Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies.

Original languageEnglish
Article number153516
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2006 Apr 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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