Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6

Yuji Takakuwa, Tetsuji Yamaguchi, Nobuo Miyamoto

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8 Citations (Scopus)

Abstract

During Si gas-source molecular beam epitaxy on Si(100) with Si2H6, dangling bonds responsible for Si2H6 dissociative adsorption on the surface were observed in situ at pressures up to 1×10-5 Torr by ultraviolet photoelectron spectroscopy. The Arrhenius plot of the amount of dangling bonds was found to show two temperature regions in the surface-reaction rate-limited region, indicating a change in Si2H6 adsorption and H2 desorption kinetics with lowering temperature. We suggested that Si2H6 dissociative adsorption becomes incomplete with lowering temperature, resulting in the appearance of higher-order hydrides in addition to monohydride, and such higher-order hydrides prevent isolated monohydrides from migrating and forming a paired monohydride on a dimer, from which H2 desorbs easily. Furthermore, the amount of dangling bonds was observed to be a logarithmic function of Si2H6 pressure over a wide hydrogen coverage.

Original languageEnglish
Pages (from-to)328-332
Number of pages5
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - 1994 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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