Si-based new material for high-efficiency thin film solar cells

Weijie Du; Masakazu Baba; Kaoru Toko; Kosuke O. Hara; Kentaro Watanabe; Takashi Sekiguchi; Noritaka Usami; Takashi Suemasu

doi:10.1109/AM-FPD.2014.6867124

Si-based new material for high-efficiency thin film solar cells

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Current status and future prospects towards BaSi₂ pn junction solar cells are presented. As a preliminary step toward forming a BaSi ₂ pn junction diode, a Cr/n-BaSi₂ Schottky junction and an n-BaSi₂/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi₂. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi₂ junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi₂.

Original language	English
Title of host publication	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	IEEE Computer Society
Pages	69-72
Number of pages	4
ISBN (Print)	9784863483958
DOIs	https://doi.org/10.1109/AM-FPD.2014.6867124
Publication status	Published - 2014 Jan 1
Externally published	Yes
Event	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan Duration: 2014 Jul 2 → 2014 Jul 4

Publication series

Name	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Country/Territory	Japan
City	Kyoto
Period	14/7/2 → 14/7/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2014.6867124

Cite this

Du, W., Baba, M., Toko, K., Hara, K. O., Watanabe, K., Sekiguchi, T., Usami, N., & Suemasu, T. (2014). Si-based new material for high-efficiency thin film solar cells. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 69-72). [6867124] (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867124

Si-based new material for high-efficiency thin film solar cells. / Du, Weijie; Baba, Masakazu; Toko, Kaoru; Hara, Kosuke O.; Watanabe, Kentaro; Sekiguchi, Takashi; Usami, Noritaka; Suemasu, Takashi.

Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 69-72 6867124 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Du, W, Baba, M, Toko, K, Hara, KO, Watanabe, K, Sekiguchi, T, Usami, N & Suemasu, T 2014, Si-based new material for high-efficiency thin film solar cells. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867124, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, IEEE Computer Society, pp. 69-72, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, Japan, 14/7/2. https://doi.org/10.1109/AM-FPD.2014.6867124

Du W, Baba M, Toko K, Hara KO, Watanabe K, Sekiguchi T et al. Si-based new material for high-efficiency thin film solar cells. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society. 2014. p. 69-72. 6867124. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). https://doi.org/10.1109/AM-FPD.2014.6867124

Du, Weijie ; Baba, Masakazu ; Toko, Kaoru ; Hara, Kosuke O. ; Watanabe, Kentaro ; Sekiguchi, Takashi ; Usami, Noritaka ; Suemasu, Takashi. / Si-based new material for high-efficiency thin film solar cells. Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. pp. 69-72 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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title = "Si-based new material for high-efficiency thin film solar cells",

abstract = "Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.",

author = "Weijie Du and Masakazu Baba and Kaoru Toko and Hara, {Kosuke O.} and Kentaro Watanabe and Takashi Sekiguchi and Noritaka Usami and Takashi Suemasu",

year = "2014",

month = jan,

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doi = "10.1109/AM-FPD.2014.6867124",

language = "English",

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series = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "IEEE Computer Society",

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booktitle = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices",

note = "21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 ; Conference date: 02-07-2014 Through 04-07-2014",

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T1 - Si-based new material for high-efficiency thin film solar cells

AU - Du, Weijie

AU - Baba, Masakazu

AU - Toko, Kaoru

AU - Hara, Kosuke O.

AU - Watanabe, Kentaro

AU - Sekiguchi, Takashi

AU - Usami, Noritaka

AU - Suemasu, Takashi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.

AB - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.

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ER -

Si-based new material for high-efficiency thin film solar cells

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