TY - GEN
T1 - Si-based new material for high-efficiency thin film solar cells
AU - Du, Weijie
AU - Baba, Masakazu
AU - Toko, Kaoru
AU - Hara, Kosuke O.
AU - Watanabe, Kentaro
AU - Sekiguchi, Takashi
AU - Usami, Noritaka
AU - Suemasu, Takashi
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.
AB - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.
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U2 - 10.1109/AM-FPD.2014.6867124
DO - 10.1109/AM-FPD.2014.6867124
M3 - Conference contribution
AN - SCOPUS:84906214494
SN - 9784863483958
T3 - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 69
EP - 72
BT - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - IEEE Computer Society
T2 - 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Y2 - 2 July 2014 through 4 July 2014
ER -