Si-based new material for high-efficiency thin film solar cells

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi 2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction and the p-n junction. From the C-V measurements, the Schottky barrier height of the Cr/n-BaSi2 junction was 0.73 eV, the build-in potential was 0.53 eV, and the built-in potential of the hetero-junction was about 1.5 V, which was coincident with the Fermi level difference between p-Si and n-BaSi2.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages69-72
Number of pages4
ISBN (Print)9784863483958
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: 2014 Jul 22014 Jul 4

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
CountryJapan
CityKyoto
Period14/7/214/7/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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