Si and Ge gas-source molecular beam epitaxy (GSMBE)

Maki Suemitsu, Fumihiko Hirose, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Growth using Si and Ge gas-source molecular beam epitaxy (GSMBE) has been studied. Selective epitaxy which occurs in both GSMBE systems has enabled precise measurements of growth rate to be made. Effects of varying growth temperature, the Si- or Ge-bearing gas pressure, and co-irradiation with 147 nm vacuum ultraviolet photons were investigated in detail. The role of substrate misorientation on growth has also been clarified. Possible models for the growth kinetics for both systems are presented and discussed.

Original languageEnglish
Pages (from-to)1015-1020
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1991 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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