TY - JOUR
T1 - Si and Ge gas-source molecular beam epitaxy (GSMBE)
AU - Suemitsu, Maki
AU - Hirose, Fumihiko
AU - Miyamoto, Nobuo
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - Growth using Si and Ge gas-source molecular beam epitaxy (GSMBE) has been studied. Selective epitaxy which occurs in both GSMBE systems has enabled precise measurements of growth rate to be made. Effects of varying growth temperature, the Si- or Ge-bearing gas pressure, and co-irradiation with 147 nm vacuum ultraviolet photons were investigated in detail. The role of substrate misorientation on growth has also been clarified. Possible models for the growth kinetics for both systems are presented and discussed.
AB - Growth using Si and Ge gas-source molecular beam epitaxy (GSMBE) has been studied. Selective epitaxy which occurs in both GSMBE systems has enabled precise measurements of growth rate to be made. Effects of varying growth temperature, the Si- or Ge-bearing gas pressure, and co-irradiation with 147 nm vacuum ultraviolet photons were investigated in detail. The role of substrate misorientation on growth has also been clarified. Possible models for the growth kinetics for both systems are presented and discussed.
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U2 - 10.1016/0022-0248(91)90595-V
DO - 10.1016/0022-0248(91)90595-V
M3 - Article
AN - SCOPUS:0025720811
VL - 107
SP - 1015
EP - 1020
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -