Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN

Ryuji Katayama, Hideyo Tsurusawa, Teruyuki Nakamura, Hironori Komaki, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A convenient and efficient version of the nitrogen flux modulation technique is demonstrated, in which the reactive nitrogen flux can be completely switched on and off, utilizing the bistability between the so-called bright- and dark-mode plasmas instead of using a shutter plate. The reactive nitrogen flux found to be controlled practically as clearly shown by a plasma spectral investigation and the linear variation in the growth rate of GaN with respect to a nitrogen-supply duration. N-polarity GaN films were grown using a nitrogen flux modulation as well as a migration enhanced epitaxial growth sequences with different durations of the reactive nitrogen supply. Their structural properties, especially the surface morphology and the density of the screw-component of threading dislocations estimated from the X-ray diffraction line width, found to be very sensitive to the nitrogen supply duration as well as the growth sequences.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
Publication statusPublished - 2007 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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