TY - GEN
T1 - Shot noise at the quantum point contact in InGaAs heterostructure
AU - Nishihara, Yoshitaka
AU - Nakamura, Shuji
AU - Kobayashi, Kensuke
AU - Ono, Teruo
AU - Kohda, Makoto
AU - Nitta, Junsaku
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We study the shot noise at a quantum point contact (QPC) fabricated in an InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. Shot noise suppression is observed at the conductance plateau of N(2e2/h) (N = 4,5,and 6), which indicates the coherent quantized channel formation in the QPC. The electron heating effect generated at the QPC explains the deviation of the observed Fano factor from the theory.
AB - We study the shot noise at a quantum point contact (QPC) fabricated in an InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. Shot noise suppression is observed at the conductance plateau of N(2e2/h) (N = 4,5,and 6), which indicates the coherent quantized channel formation in the QPC. The electron heating effect generated at the QPC explains the deviation of the observed Fano factor from the theory.
KW - InGaAs heterostructure
KW - joule heating
KW - quantum point contact
KW - shot noise
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U2 - 10.1063/1.4848410
DO - 10.1063/1.4848410
M3 - Conference contribution
AN - SCOPUS:84907311722
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 311
EP - 312
BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PB - American Institute of Physics Inc.
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -