Shot noise at the quantum point contact in InGaAs heterostructure

Yoshitaka Nishihara, Shuji Nakamura, Kensuke Kobayashi, Teruo Ono, Makoto Kohda, Junsaku Nitta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study the shot noise at a quantum point contact (QPC) fabricated in an InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. Shot noise suppression is observed at the conductance plateau of N(2e2/h) (N = 4,5,and 6), which indicates the coherent quantized channel formation in the QPC. The electron heating effect generated at the QPC explains the deviation of the observed Fano factor from the theory.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages311-312
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • InGaAs heterostructure
  • joule heating
  • quantum point contact
  • shot noise

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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