Short-time diffusion of zinc in silicon for the study of intrinsic point defects

H. Bracht, N. A. Stolwijk, H. Mehrer, I. Yonenaga

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13 Citations (Scopus)

Abstract

An experimental procedure has been developed which permits accurate short-time diffusion anneals for diffusion periods as short as a few seconds. This method is applicable to diffusors which are volatile at the diffusion temperature. It will be illustrated for zinc diffusion into silicon which mainly takes place via the kick-out mechanism. Previous long-time diffusion studies have yielded the product CeqIDI of equilibrium concentration and diffusivity of Si self-interstitials(I) involved in the interstitial-substitutional exchange of Zn. The present short-time diffusion method enables us to determine CeqI and DI separately by comparing measured spreading-resistance profiles with computer simulations based on the kick-out model.

Original languageEnglish
Pages (from-to)3559-3561
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number27
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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