Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

D. Xu, T. Suemitsu, H. Yokoyama, Y. Umeda, Y. Yamane, T. Enoki, Y. Ishii

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a 'step' on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher fT and fmax values than the usual symmetric devices.

Original languageEnglish
Pages (from-to)1527-1533
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number8
DOIs
Publication statusPublished - 1999 Aug
Externally publishedYes
EventProceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn
Duration: 1998 Aug 301998 Sep 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance'. Together they form a unique fingerprint.

Cite this