Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

D. Xu; T. Suemitsu; H. Yokoyama; Y. Umeda; Y. Yamane; T. Enoki; Y. Ishii

doi:10.1016/S0038-1101(99)00099-4

Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

D. Xu, T. Suemitsu, H. Yokoyama, Y. Umeda, Y. Yamane, T. Enoki, Y. Ishii

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a 'step' on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher f_T and f_max values than the usual symmetric devices.

Original language	English
Pages (from-to)	1527-1533
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(99)00099-4
Publication status	Published - 1999 Aug
Externally published	Yes
Event	Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: 1998 Aug 30 → 1998 Sep 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(99)00099-4

Cite this

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title = "Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance",

abstract = "We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a 'step' on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher fT and fmax values than the usual symmetric devices.",

author = "D. Xu and T. Suemitsu and H. Yokoyama and Y. Umeda and Y. Yamane and T. Enoki and Y. Ishii",

year = "1999",

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doi = "10.1016/S0038-1101(99)00099-4",

language = "English",

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journal = "Solid-State Electronics",

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number = "8",

note = "Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) ; Conference date: 30-08-1998 Through 02-09-1998",

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TY - JOUR

T1 - Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves

T2 - Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98)

AU - Xu, D.

AU - Suemitsu, T.

AU - Yokoyama, H.

AU - Umeda, Y.

AU - Yamane, Y.

AU - Enoki, T.

AU - Ishii, Y.

PY - 1999/8

Y1 - 1999/8

N2 - We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a 'step' on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher fT and fmax values than the usual symmetric devices.

AB - We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a 'step' on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher fT and fmax values than the usual symmetric devices.

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DO - 10.1016/S0038-1101(99)00099-4

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AN - SCOPUS:0033173993

VL - 43

SP - 1527

EP - 1533

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

Y2 - 30 August 1998 through 2 September 1998

ER -

Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

Abstract

ASJC Scopus subject areas

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