Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Masanobu Miyao; Mitsumasa Koyanagi; Hiroshi Tamura; Norikazu Hashimoto; Takashi Tokuyama

doi:10.7567/JJAPS.19S1.129

Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Masanobu Miyao, Mitsumasa Koyanagi, Hiroshi Tamura, Norikazu Hashimoto, Takashi Tokuyama

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Japanese journal of applied physics
Volume	19
DOIs	https://doi.org/10.7567/JJAPS.19S1.129
Publication status	Published - 1980 Jan
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Short channel MOS FET{\textquoteright}s fabricated by self-aligned ion implantation and laser annealing",

abstract = "Short channel MOS FET{\textquoteright}s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.",

author = "Masanobu Miyao and Mitsumasa Koyanagi and Hiroshi Tamura and Norikazu Hashimoto and Takashi Tokuyama",

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AU - Hashimoto, Norikazu

AU - Tokuyama, Takashi

PY - 1980/1

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AB - Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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