Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Masanobu Miyao, Mitsumasa Koyanagi, Hiroshi Tamura, Norikazu Hashimoto, Takashi Tokuyama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalJapanese journal of applied physics
Volume19
DOIs
Publication statusPublished - 1980 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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