Abstract
Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 129-132 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 19 |
| DOIs | |
| Publication status | Published - 1980 Jan |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Miyao, M., Koyanagi, M., Tamura, H., Hashimoto, N., & Tokuyama, T. (1980). Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing. Japanese journal of applied physics, 19, 129-132. https://doi.org/10.7567/JJAPS.19S1.129