TY - JOUR
T1 - Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing
AU - Miyao, Masanobu
AU - Koyanagi, Mitsumasa
AU - Tamura, Hiroshi
AU - Hashimoto, Norikazu
AU - Tokuyama, Takashi
PY - 1980/1
Y1 - 1980/1
N2 - Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.
AB - Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.
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U2 - 10.7567/JJAPS.19S1.129
DO - 10.7567/JJAPS.19S1.129
M3 - Article
AN - SCOPUS:84951897506
VL - 19
SP - 129
EP - 132
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
ER -