Abstract
Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.
Original language | English |
---|---|
Pages (from-to) | 621-623 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 35 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)