Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing

M. Koyanagi; H. Tamura; M. Miyao; N. Hashimoto; T. Tokuyama

doi:10.1063/1.91229

Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing

M. Koyanagi, H. Tamura, M. Miyao, N. Hashimoto, T. Tokuyama

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

Original language	English
Pages (from-to)	621-623
Number of pages	3
Journal	Applied Physics Letters
Volume	35
Issue number	8
DOIs	https://doi.org/10.1063/1.91229
Publication status	Published - 1979

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing",

abstract = "Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.",

author = "M. Koyanagi and H. Tamura and M. Miyao and N. Hashimoto and T. Tokuyama",

year = "1979",

doi = "10.1063/1.91229",

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T1 - Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing

AU - Koyanagi, M.

AU - Tamura, H.

AU - Miyao, M.

AU - Hashimoto, N.

AU - Tokuyama, T.

PY - 1979

Y1 - 1979

N2 - Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

AB - Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

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Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing

Abstract

ASJC Scopus subject areas

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