Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing

Mitsumasa Koyanagi, H. Tamura, M. Miyao, N. Hashimoto, T. Tokuyama

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

Original languageEnglish
Pages (from-to)621-623
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number8
DOIs
Publication statusPublished - 1979 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Koyanagi, M., Tamura, H., Miyao, M., Hashimoto, N., & Tokuyama, T. (1979). Short-channel MOS FET's fabricated by self-aligned ion implantation and laser annealing. Applied Physics Letters, 35(8), 621-623. https://doi.org/10.1063/1.91229