SHORT CHANNEL MOS FET's FABRICATED BY SELF-ALIGNED ION IMPLANATION AND LASER ANNEALING.

Masanobu Miyao; Mitsumasa Koyanagi; Hiroshi Tamura; Norikazu Hashimoto; Takashi Tokuyama

SHORT CHANNEL MOS FET's FABRICATED BY SELF-ALIGNED ION IMPLANATION AND LASER ANNEALING.

Masanobu Miyao, Mitsumasa Koyanagi, Hiroshi Tamura, Norikazu Hashimoto, Takashi Tokuyama

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

Abstract

Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

Original language	English
Pages	129-113
Number of pages	17
Publication status	Published - 1980 Jan 1

ASJC Scopus subject areas

Engineering(all)

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title = "SHORT CHANNEL MOS FET's FABRICATED BY SELF-ALIGNED ION IMPLANATION AND LASER ANNEALING.",

abstract = "Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.",

author = "Masanobu Miyao and Mitsumasa Koyanagi and Hiroshi Tamura and Norikazu Hashimoto and Takashi Tokuyama",

year = "1980",

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day = "1",

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pages = "129--113",

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T1 - SHORT CHANNEL MOS FET's FABRICATED BY SELF-ALIGNED ION IMPLANATION AND LASER ANNEALING.

AU - Miyao, Masanobu

AU - Koyanagi, Mitsumasa

AU - Tamura, Hiroshi

AU - Hashimoto, Norikazu

AU - Tokuyama, Takashi

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

AB - Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

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