Abstract
Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.
Original language | English |
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Pages | 129-113 |
Number of pages | 17 |
Publication status | Published - 1980 Jan 1 |
ASJC Scopus subject areas
- Engineering(all)