SHORT CHANNEL MOS FET's FABRICATED BY SELF-ALIGNED ION IMPLANATION AND LASER ANNEALING.

Masanobu Miyao, Mitsumasa Koyanagi, Hiroshi Tamura, Norikazu Hashimoto, Takashi Tokuyama

Research output: Contribution to conferencePaperpeer-review

Abstract

Short channel MOS FET's are successfully fabricated by a combination of self-aligned ion implanation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

Original languageEnglish
Pages129-113
Number of pages17
Publication statusPublished - 1980 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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