Abstract
A silicon integrated RF magnetic field probe has been designed and microfabricated using CMOS-silicon-on-insulator (SOI) technology with a 0.15-μm design rule on a high-resistivity silicon substrate. The size of the coil window was 180 × 180 μm3. Coil and electrodes were separated by a 530-μm-long stripline so as to avoid stray voltage induction at the electrode portion. This probe was applied to evaluate the radiated emission from a thin-film electromagnetic noise suppressor. It was clarified and shown that the field intensity was suppressed by 4.0 dB at the center of the signal line at 1 GHz.
Original language | English |
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Pages (from-to) | 2370-2372 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 43 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 Jun |
Keywords
- Amorphous magnetic films
- Complementary metal-oxide semiconductor (CMOS) analog integrated circuits (ICs)
- Electromagnetic radiative interference
- Magnetic resonance
- Magnetic-field measurement
- Packaging
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering