Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure

Tomoyuki Yokota; Tsuyoshi Sekitani; Takeyoshi Tokuhara; Naoya Take; Ute Zschieschang; Hagen Klauk; Kazuo Takimiya; Tsung Ching Huang; Makoto Takamiya; Takayasu Sakurai; Takao Someya

doi:10.1109/TED.2012.2220853

Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure

Tomoyuki Yokota, Tsuyoshi Sekitani, Takeyoshi Tokuhara, Naoya Take, Ute Zschieschang, Hagen Klauk, Kazuo Takimiya, Tsung Ching Huang, Makoto Takamiya, Takayasu Sakurai, Takao Someya

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 × 8 amplifier cells, with an effective size of 7 ×7 cm². The organic transistors exhibit a mobility of 1.7 cm²V. s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.

Original language	English
Article number	6343231
Pages (from-to)	3434-3441
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2220853
Publication status	Published - 2012
Externally published	Yes

Keywords

Flexible electronics
large-area sensor
thin-film transistors (TFTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2012.2220853

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Yokota, T., Sekitani, T., Tokuhara, T., Take, N., Zschieschang, U., Klauk, H., Takimiya, K., Huang, T. C., Takamiya, M., Sakurai, T., & Someya, T. (2012). Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure. IEEE Transactions on Electron Devices, 59(12), 3434-3441. [6343231]. https://doi.org/10.1109/TED.2012.2220853

Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure. / Yokota, Tomoyuki; Sekitani, Tsuyoshi; Tokuhara, Takeyoshi; Take, Naoya; Zschieschang, Ute; Klauk, Hagen; Takimiya, Kazuo; Huang, Tsung Ching; Takamiya, Makoto; Sakurai, Takayasu; Someya, Takao.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 12, 6343231, 2012, p. 3434-3441.

Research output: Contribution to journal › Article › peer-review

Yokota, T, Sekitani, T, Tokuhara, T, Take, N, Zschieschang, U, Klauk, H, Takimiya, K, Huang, TC, Takamiya, M, Sakurai, T & Someya, T 2012, 'Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure', IEEE Transactions on Electron Devices, vol. 59, no. 12, 6343231, pp. 3434-3441. https://doi.org/10.1109/TED.2012.2220853

Yokota, Tomoyuki ; Sekitani, Tsuyoshi ; Tokuhara, Takeyoshi ; Take, Naoya ; Zschieschang, Ute ; Klauk, Hagen ; Takimiya, Kazuo ; Huang, Tsung Ching ; Takamiya, Makoto ; Sakurai, Takayasu ; Someya, Takao. / Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 12. pp. 3434-3441.

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title = "Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure",

abstract = "We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 × 8 amplifier cells, with an effective size of 7 ×7 cm2. The organic transistors exhibit a mobility of 1.7 cm2V. s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.",

keywords = "Flexible electronics, large-area sensor, thin-film transistors (TFTs)",

author = "Tomoyuki Yokota and Tsuyoshi Sekitani and Takeyoshi Tokuhara and Naoya Take and Ute Zschieschang and Hagen Klauk and Kazuo Takimiya and Huang, {Tsung Ching} and Makoto Takamiya and Takayasu Sakurai and Takao Someya",

note = "Funding Information: Manuscript received July 22, 2012; revised September 3, 2012; accepted September 18, 2012. Date of current version November 16, 2012. The work of T. Yokota was supported by The Japan Society for the Promotion of Science (JSAP) Research Fellowships for Young Scientists. The review of this paper was arranged by Editor H. S. Tae. T. Yokota is with the Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan (e-mail: someya@ee.t.u-tokyo.ac.jp). T. Sekitani and T. Someya are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan, and also with the Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, Tokyo 113-8656, Japan. T. Tokuhara and N. Take are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan. U. Zschieschang and H. Klauk are with the Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany. K. Takimiya is with the Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima 739-8527, Japan. T.-C. Huang is with TSMC North America, San Jose, CA 95134 USA. M. Takamiya and T. Sakurai are with the Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan. Digital Object Identifier 10.1109/TED.2012.2220853",

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AU - Tokuhara, Takeyoshi

AU - Take, Naoya

AU - Zschieschang, Ute

AU - Klauk, Hagen

AU - Takimiya, Kazuo

AU - Huang, Tsung Ching

AU - Takamiya, Makoto

AU - Sakurai, Takayasu

AU - Someya, Takao

N1 - Funding Information: Manuscript received July 22, 2012; revised September 3, 2012; accepted September 18, 2012. Date of current version November 16, 2012. The work of T. Yokota was supported by The Japan Society for the Promotion of Science (JSAP) Research Fellowships for Young Scientists. The review of this paper was arranged by Editor H. S. Tae. T. Yokota is with the Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan (e-mail: someya@ee.t.u-tokyo.ac.jp). T. Sekitani and T. Someya are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan, and also with the Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, Tokyo 113-8656, Japan. T. Tokuhara and N. Take are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan. U. Zschieschang and H. Klauk are with the Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany. K. Takimiya is with the Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima 739-8527, Japan. T.-C. Huang is with TSMC North America, San Jose, CA 95134 USA. M. Takamiya and T. Sakurai are with the Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan. Digital Object Identifier 10.1109/TED.2012.2220853

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