Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure

Tomoyuki Yokota, Tsuyoshi Sekitani, Takeyoshi Tokuhara, Naoya Take, Ute Zschieschang, Hagen Klauk, Kazuo Takimiya, Tsung Ching Huang, Makoto Takamiya, Takayasu Sakurai, Takao Someya

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 × 8 amplifier cells, with an effective size of 7 ×7 cm2. The organic transistors exhibit a mobility of 1.7 cm2V. s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.

Original languageEnglish
Article number6343231
Pages (from-to)3434-3441
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
Publication statusPublished - 2012 Jan 1
Externally publishedYes

Keywords

  • Flexible electronics
  • large-area sensor
  • thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Yokota, T., Sekitani, T., Tokuhara, T., Take, N., Zschieschang, U., Klauk, H., Takimiya, K., Huang, T. C., Takamiya, M., Sakurai, T., & Someya, T. (2012). Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure. IEEE Transactions on Electron Devices, 59(12), 3434-3441. [6343231]. https://doi.org/10.1109/TED.2012.2220853