TY - JOUR
T1 - Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure
AU - Yokota, Tomoyuki
AU - Sekitani, Tsuyoshi
AU - Tokuhara, Takeyoshi
AU - Take, Naoya
AU - Zschieschang, Ute
AU - Klauk, Hagen
AU - Takimiya, Kazuo
AU - Huang, Tsung Ching
AU - Takamiya, Makoto
AU - Sakurai, Takayasu
AU - Someya, Takao
N1 - Funding Information:
Manuscript received July 22, 2012; revised September 3, 2012; accepted September 18, 2012. Date of current version November 16, 2012. The work of T. Yokota was supported by The Japan Society for the Promotion of Science (JSAP) Research Fellowships for Young Scientists. The review of this paper was arranged by Editor H. S. Tae. T. Yokota is with the Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan (e-mail: someya@ee.t.u-tokyo.ac.jp). T. Sekitani and T. Someya are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan, and also with the Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, Tokyo 113-8656, Japan. T. Tokuhara and N. Take are with the Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan. U. Zschieschang and H. Klauk are with the Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany. K. Takimiya is with the Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima 739-8527, Japan. T.-C. Huang is with TSMC North America, San Jose, CA 95134 USA. M. Takamiya and T. Sakurai are with the Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan. Digital Object Identifier 10.1109/TED.2012.2220853
PY - 2012
Y1 - 2012
N2 - We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 × 8 amplifier cells, with an effective size of 7 ×7 cm2. The organic transistors exhibit a mobility of 1.7 cm2V. s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.
AB - We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 × 8 amplifier cells, with an effective size of 7 ×7 cm2. The organic transistors exhibit a mobility of 1.7 cm2V. s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.
KW - Flexible electronics
KW - large-area sensor
KW - thin-film transistors (TFTs)
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U2 - 10.1109/TED.2012.2220853
DO - 10.1109/TED.2012.2220853
M3 - Article
AN - SCOPUS:84870300629
VL - 59
SP - 3434
EP - 3441
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 6343231
ER -