Shallow traps and radiative recombination processes in Lu3 Al5 O12: Ce single crystal scintillator

M. Nikl, A. Vedda, M. Fasoli, I. Fontana, V. V. Laguta, E. Mihokova, J. Pejchal, J. Rosa, K. Nejezchleb

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Abstract

Thermally stimulated luminescence (TSL) glow curves and emission spectra were studied in undoped and Ce-doped Lu3 Al5 O12 single crystals by wavelength resolved TSL measurements in the 10-310 K temperature range. Isothermal phosphorescence measurements in the 10-100 K range were also performed, which point to the existence of a tunneling-driven radiative recombination process. These processes can explain the presence and time-dependence of the submicrosecond slow decay component in the scintillation decay. Electron paramagnetic resonance experiments suggest the presence of LuAl defects in the vicinity of Ce3+ ions, which are the most probable electron and hole traps participating in the tunneling-driven radiative recombination process.

Original languageEnglish
Article number195121
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number19
DOIs
Publication statusPublished - 2007 Nov 21

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Nikl, M., Vedda, A., Fasoli, M., Fontana, I., Laguta, V. V., Mihokova, E., Pejchal, J., Rosa, J., & Nejezchleb, K. (2007). Shallow traps and radiative recombination processes in Lu3 Al5 O12: Ce single crystal scintillator. Physical Review B - Condensed Matter and Materials Physics, 76(19), [195121]. https://doi.org/10.1103/PhysRevB.76.195121