Semiconductor spintronics using ferromagnetic semiconductor heterostrucutures

Research output: Contribution to journalConference article

Abstract

A report on semiconductor spintronics using ferromagnetic semiconductor heterostructures was presented. A mean field theory based on exchange between carrier spin and Mn spin was shown. The ferromagnetic phase transition was electrically switched by the use of insulating-gate field-effect transistor structures. Electrical electron spin injection was realized in a spin Esaki diode structure.

Original languageEnglish
Pages (from-to)FA03
JournalDigests of the Intermag Conference
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Semiconductor spintronics using ferromagnetic semiconductor heterostrucutures'. Together they form a unique fingerprint.

  • Cite this