A report on semiconductor spintronics using ferromagnetic semiconductor heterostructures was presented. A mean field theory based on exchange between carrier spin and Mn spin was shown. The ferromagnetic phase transition was electrically switched by the use of insulating-gate field-effect transistor structures. Electrical electron spin injection was realized in a spin Esaki diode structure.
|Journal||Digests of the Intermag Conference|
|Publication status||Published - 2002 Dec 1|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: 2002 Apr 28 → 2002 May 2
ASJC Scopus subject areas
- Electrical and Electronic Engineering